? semiconductor components industries, llc, 2012 february, 2012 ? rev. 7 1 publication order number: ngb8202n/d ngb8202n, NGB8202AN ignition igbt 20 a, 400 v, n ? channel d 2 pak this logic level insulated gate bipolar transistor (igbt) features monolithic circuitry integrating esd and overvoltage clamped protection for use in inductive coil drivers applications. primary uses include ignition, direct fuel injection, or wherever high voltage and high current switching is required. features ? ideal for coil ? on ? plug and driver ? on ? coil applications ? gate ? emitter esd protection ? temperature compensated gate ? collector voltage clamp limits stress applied to load ? integrated esd diode protection ? low threshold voltage for interfacing power loads to logic or microprocessor devices ? low saturation voltage ? high pulsed current capability ? these are pb ? free devices applications ? ignition systems maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collector ? emitter voltage v ces 440 v collector ? gate voltage v cer 440 v gate ? emitter voltage v ge 15 v collector current ? continuous @ t c = 25 c ? pulsed i c 20 50 a dc a ac continuous gate current i g 1.0 ma transient gate current (t 2 ms, f 100 hz) i g 20 ma esd (charged ? device model) esd 2.0 kv esd (human body model) r = 1500 , c = 100 pf esd 8.0 kv esd (machine model) r = 0 , c = 200 pf esd 500 v total power dissipation @ t c = 25 c derate above 25 c p d 150 1.0 w w/ c operating & storage temperature range t j , t stg ? 55 to +175 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 20 amps, 400 volts v ce(on) = 1.3 v @ i c = 10 a, v ge 4.5 v c e g d 2 pak case 418b style 4 device package shipping ? ordering information ngb8202nt4g d 2 pak (pb ? free) 800/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. http://onsemi.com r ge r g NGB8202ANt4g d 2 pak (pb ? free) 800/tape & reel marking diagram gb 8202xxg ayww 1 gate 3 emitter 4 collector 2 collector gb8202xx = device code xx = n or an a = assembly location y = year ww = work week g = pb ? free package 1
ngb8202n, NGB8202AN http://onsemi.com 2 unclamped collector ? to ? emitter avalanche characteristics ( ? 55 t j 175 c) characteristic symbol value unit single pulse collector ? to ? emitter avalanche energy v cc = 50 v, v ge = 5.0 v, pk i l = 16.7 a, r g = 1000 , l = 1.8 mh, starting t j = 25 c v cc = 50 v, v ge = 5.0 v, pk i l = 14.9 a, r g = 1000 , l = 1.8 mh, starting t j = 150 c v cc = 50 v, v ge = 5.0 v, pk i l = 14.1 a, r g = 1000 , l = 1.8 mh, starting t j = 175 c e as 250 200 180 mj reverse avalanche energy v cc = 100 v, v ge = 20 v, pk i l = 25.8 a, l = 6.0 mh, starting t j = 25 c e as(r) 2000 mj thermal characteristics thermal resistance, junction ? to ? case r jc 1.0 c/w thermal resistance, junction ? to ? ambient (note 1) r ja 62.5 c/w maximum temperature for soldering purposes, 1/8 from case for 5 seconds (note 2) t l 275 c 1. when surface mounted to an fr4 board using the minimum recommended pad size. 2. for further details, see soldering and mounting techniques reference manual: solderrm/d. electrical characteristics characteristic symbol test conditions temperature min typ max unit off characteristics collector ? emitter clamp voltage bv ces i c = 2.0 ma t j = ? 40 c to 175 c 370 395 420 v i c = 10 ma t j = ? 40 c to 175 c 390 415 440 zero gate voltage collector current i ces v ge = 0 v, v ce = 15 v t j = 25 c 0.1 1.0 a v ce = 200 v, v ge = 0 v t j = 25 c 0.5 1.5 10 a t j = 175 c 1.0 25 100* t j = ? 40 c 0.4 0.8 5.0 reverse collector ? emitter clamp voltage b vces(r) i c = ? 75 ma t j = 25 c 30 35 39 v t j = 175 c 35 39 45* t j = ? 40 c 30 33 37 reverse collector ? emitter leakage current i ces(r) v ce = ? 24 v ? ngb8202n v ce = ? 24 v ? NGB8202AN t j = 25 c 0.05 0.1 0.5 ma t j = 175 c 1.0 5.0 10 t j = ? 40 c 0.005 0.01 0.1 t j = 25 c 0.05 0.2 1.0 t j = 175 c 1.0 8.5 25 t j = ? 40 c 0.005 0.025 0.2 gate ? emitter clamp voltage bv ges i g = 5.0 ma t j = ? 40 c to 175 c 12 12.5 14 v gate ? emitter leakage current i ges v ge = 5.0 v t j = ? 40 c to 175 c 200 300 350* a gate resistor r g t j = ? 40 c to 175 c 70 gate ? emitter resistor r ge t j = ? 40 c to 175 c 14.25 16 25 k on characteristics (note 3) gate threshold voltage v ge(th) i c = 1.0 ma, v ge = v ce t j = 25 c 1.5 1.8 2.1 v t j = 175 c 0.7 1.0 1.3 t j = ? 40 c 1.7 2.0 2.3* threshold temperature coefficient (negative) 4.0 4.6 5.2 mv/ c *maximum value of characteristic across temperature range. 3. pulse test: pulse width 300 s, duty cycle 2%.
ngb8202n, NGB8202AN http://onsemi.com 3 electrical characteristics characteristic symbol test conditions temperature min typ max unit on characteristics (note 4) collector ? to ? emitter on ? voltage v ce(on) i c = 6.5 a, v ge = 3.7 v ? ngb8202n i c = 6.5 a, v ge = 3.7 v ? NGB8202AN t j = 25 c 0.95 1.15 1.35 v t j = 175 c 0.7 0.95 1.15 t j = ? 40 c 1.0 1.3 1.4 t j = 25 c 0.85 1.03 1.35 t j = 175 c 0.7 0.9 1.15 t j = ? 40 c 0.0 1.11 1.4 i c = 9.0 a, v ge = 3.9 v ? ngb8202n i c = 9.0 a, v ge = 3.9 v ? NGB8202AN t j = 25 c 0.95 1.25 1.45 t j = 175 c 0.8 1.05 1.25 t j = ? 40 c 1.1 1.4 1.5 t j = 25 c 0.9 1.11 1.45 t j = 175 c 0.8 1.01 1.25 t j = ? 40 c 1.0 1.18 1.5 i c = 7.5 a, v ge = 4.5 v t j = 25 c 0.85 1.15 1.4 t j = 175 c 0.7 0.95 1.2 t j = ? 40 c 1.0 1.3 1.6* i c = 10 a, v ge = 4.5 v t j = 25 c 1.0 1.3 1.6 t j = 175 c 0.8 1.05 1.4 t j = ? 40 c 1.1 1.4 1.7* i c = 15 a, v ge = 4.5 v t j = 25 c 1.15 1.45 1.7 t j = 175 c 1.0 1.3 1.55 t j = ? 40 c 1.25 1.55 1.8* i c = 20 a, v ge = 4.5 v ? ngb8202n i c = 20 a, v ge = 4.5 v ? NGB8202AN t j = 25 c 1.3 1.6 1.9 t j = 175 c 1.2 1.5 1.8 t j = ? 40 c 1.4 1.75 2.0 t j = 25 c 1.1 1.4 1.9 t j = 175 c 1.2 1.5 1.8 t j = ? 40 c 1.3 1.42 2.0 forward transconductance gfs i c = 6.0 a, v ce = 5.0 v t j = 25 c 10 18 25 mhos dynamic characteristics input capacitance c iss f = 10 khz, v ce = 25 v t j = 25 c 1100 1300 1500 pf output capacitance c oss 70 80 90 transfer capacitance c rss 18 20 22
ngb8202n, NGB8202AN http://onsemi.com 4 electrical characteristics characteristic unit max typ min temperature test conditions symbol switching characteristics turn ? off delay time (resistive) t d(off) v cc = 300 v, i c = 9.0 a r g = 1.0 k , r l = 33 , v ge = 5.0 v t j = 25 c 6.0 8.0 10 sec t j = 175 c 6.0 8.0 10 fall time (resistive) t f t j = 25 c 4.0 6.0 8.0 t j = 175 c 8.0 10.5 14 turn ? off delay time (inductive) t d(off) v cc = 300 v, i c = 9.0 a r g = 1.0 k , l = 300 h, v ge = 5.0 v t j = 25 c 3.0 5.0 7.0 t j = 175 c 5.0 7.0 9.0 fall time (inductive) t f t j = 25 c 1.5 3.0 4.5 t j = 175 c 5.0 7.0 10 turn ? on delay time t d(on) v cc = 14 v, i c = 9.0 a r g = 1.0 k , r l = 1.5 , v ge = 5.0 v t j = 25 c 1.0 1.5 2.0 t j = 175 c 1.0 1.5 2.0 rise time t r t j = 25 c 4.0 6.0 8.0 t j = 175 c 3.0 5.0 7.0 *maximum value of characteristic across temperature range. 4. pulse test: pulse width 300 s, duty cycle 2%.
ngb8202n, NGB8202AN http://onsemi.com 5 typical electrical characteristics figure 1. self clamped inductive switching figure 2. open secondary avalanche current vs. temperature figure 3. collector ? to ? emitter voltage vs. junction temperature figure 4. collector current vs. collector ? to ? emitter voltage figure 5. collector current vs. collector ? to ? emitter voltage figure 6. collector current vs. collector ? to ? emitter voltage inductor (mh) 250 068 4 100 50 200 0 400 150 10 t j = 25 c scis energy (mj) t j , junction temperature ( c) ? 50 50 75 25 0 100 ? 25 125 10 20 5 15 0 25 30 175 v cc = 14 v v ge = 5.0 v r g = 1000 l = 10 mh 150 l = 3.0 mh l = 1.8 mh i a , avalanche current (a) 1.25 t j , junction temperature ( c) v ce , collector to emitter voltage (v) ? 50 50 75 25 0 100 ? 25 125 0.5 1.5 0.25 1.0 0.0 1.75 2.0 0.75 150 v ge = 4.5 v i c = 25 a i c = 20 a i c = 15 a i c = 10 a i c = 7.5 a 0 40 6 10 4 2 i c, collector current (a) 0 60 20 30 50 8 1357 v ce , collector to emitter voltage (v) t j = 175 c v ge = 10 v 5 v 4.5 v 4 v 3.5 v 3 v 2.5 v 0 40 6 10 4 2 i c, collector current (a) 0 60 20 30 50 8 1357 v ce , collector to emitter voltage (v) t j = ? 40 c v ge = 10 v 5 v 4.5 v 4 v 3.5 v 3 v 2.5 v 40 10 2 i c, collector current (a) 0 60 20 30 50 8 1357 v ce , collector to emitter voltage (v) t j = 25 c v ge = 10 v 5 v 4.5 v 4 v 3.5 v 3 v 2.5 v 06 4 v cc = 14 v v ge = 5.0 v r g = 1000 350 300 2 t j = 175 c 175
ngb8202n, NGB8202AN http://onsemi.com 6 typical electrical characteristics t j , junction temperature ( c) gate threshold voltage (v) ? 50 75 100 25 0 125 ? 25 175 mean + 4 mean ? 4 mean v ge , gate to emitter voltage (v) 1.50 0.25 0 2.50 0.75 1.25 2.00 10000 1000 100 10 0.1 6 4 0 8 10 12 figure 7. transfer characteristics figure 8. collector ? to ? emitter leakage current vs. temperature figure 9. gate threshold voltage vs. temperature figure 10. capacitance vs. collector ? to ? emitter voltage figure 11. resistive switching fall time vs. temperature t j , junction temperature ( c) figure 12. inductive switching fall time vs. temperature t j , junction temperature ( c) collector to emitter leakage current ( a) switching time ( s) 050 25 ? 25 125 175 t j = 175 c 75 100 150 50 75 25 100 175 150 t fall v cc = 300 v v ge = 5.0 v r g = 1000 i c = 9.0 a l = 300 h v ce = 200 v 1.5 3 3.5 2.5 4 2 0.5 20 10 40 0 30 0 v ce = 5 v i c , collector current (a) 1.0 50 150 0.50 1.00 1.75 2.25 2 125 t delay 10000 1000 100 10 0.1 v ce , collector to emitter voltage (v) c, capacitance (pf) 015 525 10 20 c rss c iss c oss 1.0 6 4 0 8 10 12 t j , junction temperature ( c) switching time ( s) 75 50 100 175 150 t fall v cc = 300 v v ge = 5.0 v r g = 1000 i c = 9.0 a r l = 33 2 25 125 t delay 25 15 45 5 35 1 t j = ? 40 c t j = 25 c ? 50 v ce = ? 24 v
ngb8202n, NGB8202AN http://onsemi.com 7 0.000001 0.001 0.0001 0.1 100 1 0.01 0.01 t,time (s) r(t), transient thermal resistance ( c/watt) 110 100 1000 0.1 figure 13. minimum pad transient thermal resistance (non ? normalized junction ? to ? ambient) 10 0.00001 0.2 single pulse 0.1 0.05 0.02 0.01 duty cycle = 0.5 0.000001 0.001 0.0001 0.1 1 0.01 0.01 t,time (s) r jc (t), transient thermal resistance ( c/watt) 1 0.1 figure 14. best case transient thermal resistance (non ? normalized junction ? to ? case mounted on cold plate) 0.00001 0.2 single pulse 0.1 0.05 0.02 0.01 duty cycle = 0.5 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 t j(pk) ? t a = p (pk) r ja (t) for d=1: r jc r(t) for t 0.1 s p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 t j(pk) ? t a = p (pk) r jc (t)
ngb8202n, NGB8202AN http://onsemi.com 8 package dimensions seating plane s g d ? t ? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ? b ? m b style 4: pin 1. gate 2. collector 3. emitter 4. collector w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b ? 01 thru 418b ? 03 obsolete, new standard 418b ? 04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f p u view w ? w d 2 pak 3 case 418b ? 04 issue k *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 8.38 5.080 dimensions: millimeters pitch 2x 16.155 1.016 2x 10.49 3.504 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. ngb8202n/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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